Advanced Nanoanalysis of a Hf-Based High-k Dielectric Stack Prior to Activation
نویسندگان
چکیده
Analytical electron microscopy techniques are used to investigate elemental distributions across a high-k dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack.
منابع مشابه
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